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Study of dielectric properties for porous silicon prepared by anodization
Other Title(s)
دراسة الخواص العزلية للسيلكون المسامي المحضر بالأنؤدة
Author
Source
Issue
Vol. 13, Issue 4 (31 Dec. 2018), pp.40-55, 16 p.
Publisher
University of Thi-Qar Research and Development Department
Publication Date
2018-12-31
Country of Publication
Iraq
No. of Pages
16
Main Subjects
Natural & Life Sciences (Multidisciplinary)
Abstract EN
The nanostructure for porous silicon (PS) films is produced by anodization of p-type silicon chip with current consistency (15 mA/cm2 ), etching time about 10 min and HF concentration (32%) to the formation nanosized pore order with a dimension of around few hundreds nanometric.
The films were featured by the measurement of atomic force microscopy (AFM) in the Baghdad university, X-Ray diffraction (XRD) and FTIR spectroscopy characteristics in the technological university.
I am having appraising crystallites size from XRD about nanoscale for porous silicon and AFM proves the nanometric size.
Chemical fictionalizations through the electrochemical etching clear on superficies chemical structure of PS.
The etching possess disproportionate microstructures that include Si-H clusters in (Si3-SiH), sparse in amorphous silica matrix and Si-H2 scissor mode.
From the FTIR testing appeared that the Si suspending bonds of the as- produced PS layer have massive quantities of Hydrogen to form weak Si–H bonds related to Si–H stretch (Si3-SiH) and Si-H stretch (Si2-SiH).
The AC electrical properties were measured with LCR meter analyzer the frequency between 50 Hz and 5 MHz.
for capacitance, dielectric and loss tangent (tan δD) to balk silicon and porous silicon have been done in the ministry of science and technology.
American Psychological Association (APA)
Abd al-Aziz, Salah M.. 2018. Study of dielectric properties for porous silicon prepared by anodization. University of Thi-Qar Journal،Vol. 13, no. 4, pp.40-55.
https://search.emarefa.net/detail/BIM-875221
Modern Language Association (MLA)
Abd al-Aziz, Salah M.. Study of dielectric properties for porous silicon prepared by anodization. University of Thi-Qar Journal Vol. 13, no. 4 (Dec. 2018), pp.40-55.
https://search.emarefa.net/detail/BIM-875221
American Medical Association (AMA)
Abd al-Aziz, Salah M.. Study of dielectric properties for porous silicon prepared by anodization. University of Thi-Qar Journal. 2018. Vol. 13, no. 4, pp.40-55.
https://search.emarefa.net/detail/BIM-875221
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 53-55
Record ID
BIM-875221