Preparation of silicon nano-structure by laser-induced etching process
Other Title(s)
تحضير السيلكون النانوي التركيب باستخدام عملية القشط المحتثة بالليزر
Author
Source
Publisher
University of Kufa Faculty of Science Department of Physics
Publication Date
2009-03-31
Country of Publication
Iraq
No. of Pages
7
Main Subjects
English Abstract
Silicon nano-structure has been prepared in this work via Laser-induced etching process (LIE) on n-type silicon wafer (3 Ω.cm resistivity) in hydrofluoric acid (HF) (24.5 % concentration) at different etching times (5 – 25 min.).
The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength.
The morphological and photoluminescence characteristics of these material such as porosity, surface morphology and nanocrystallite size have been investigated using scanning electron microscope (SEM), photoluminescence (PL) measurements, and the gravimetric method.
Data Type
Conference Papers
Record ID
BIM-884622
American Psychological Association (APA)
Abbas, Adi Arkan. 2009-03-31. Preparation of silicon nano-structure by laser-induced etching process. Conference of Pure and Applied Sciences (2nd : 2009 : University of Kufa, Iraq). . Vol. 1, no. 1 (Special issue) (2009), pp.54-60.Najaf Iraq : University of Kufa Faculty of Science Department of Physics.
https://search.emarefa.net/detail/BIM-884622
Modern Language Association (MLA)
Abbas, Adi Arkan. Preparation of silicon nano-structure by laser-induced etching process. . Najaf Iraq : University of Kufa Faculty of Science Department of Physics. 2009-03-31.
https://search.emarefa.net/detail/BIM-884622
American Medical Association (AMA)
Abbas, Adi Arkan. Preparation of silicon nano-structure by laser-induced etching process. . Conference of Pure and Applied Sciences (2nd : 2009 : University of Kufa, Iraq).
https://search.emarefa.net/detail/BIM-884622
