Study the surface characterization of anodic grow SiO2 nano film on si by using AFM

Abstract EN

In this work studied The surface characterization of SiO2 nano film in the thickness range (2.3- 11.5) nm by using atomic force microscopy .

SiO2 nano film growth on Silicon (100) p-type substrates , by using the anodic oxidation technique using (%75H2O+%25 isopropanol ) solution containing 0.1N KNO3 as supporting electrolyte.

The chemical analysis of the surface of SiO2 has been done by (EDAX) shows the presence of O and Si elements, The films thickness has been found that is increases as formation potential increases.

The (AFM) is used to study the nanotopography of SiO2 film .

However it has been found that all of the following characteristics ,the nanotopography of the SiO2 nano film , root mean square RMS surface roughness of the SiO2 nano film , grain area , grain volume and grain length increases with the increase of SiO2 nano thickness