Design and fabrication of a Carbone nanotube field effect transistor based on dielectrophoresis technique and low cost photolithography

Abstract EN

In this work, Micro- and Nanofabrication technology was used to fabricate and demonstrate a simple Carbon nanotubes (CNTs) field effect transistors (FETs) which is constructed on Si/SiO2 substrate.

Simple photolithography technique was used for patterning the photoresist using a mask and a UV LEDs.

Thermal evaporator was utilized to deposit coper metal on the substrate.

After liftoff, electrodes of 5 μm width and spacing of 3 μm were achieved.

Deilecrophrisis technique was adopted to fetch the CNTs towards the fabricated electrode fingers.

The fabricated CNT-FETs exhibit high electron mobility, around 10000 cm2/Vs.

Current transfer characteristic observed that the device has p-type semiconductor properties, which can be attributed to the oxygen molecules absorption of CNTs oxygen from the testing environment.