Capacitive MEMS accelerometer based on silicon-on-insulator technology : design, simulation and radiation affect

Abstract EN

This work introduces the design, simulation and the radiation effects for an out of plane micromachined z-axis accelerometer based on the silicon-on-insulator technology.

In this design, the response to acceleration is sensed capacitevely via four comb-finger capacitors.

This scheme helps the implementation of the sensor by the bulk micromachining process.

The simulation results shows a good z-axis sensitivity of 24.14(pm/g) and a total equivalent noise acceleration as small as 3.41(μg/(Hz)1/2) and a minimum off-axis sensitivities of 0.15% and 0.3% in x- and y- directions respectively.

The radiation sensitivity depends on the sensing or actuation principle, device design, and radiation-induced trapped charge in dielectrics.