Photoluminescence behavior of Cu2+xZn1-xSnS4 thin films by SILAR method
Joint Authors
Henry, J.
Mohanraj, K.
Sivakumar, G. Ch. V.
Source
Issue
Vol. 11, Issue 2 (31 Aug. 2018), pp.101-105, 5 p.
Publisher
Yarmouk University Deanship of Research and Graduate Studies
Publication Date
2018-08-31
Country of Publication
Jordan
No. of Pages
5
Main Subjects
Abstract EN
Cu2ZnSnS4 thin films were deposited on a glass substrate by chemical method.
The XRD pattern confirms the formation of tetragonal structure CZTS and peak shift is noticed for Cu doping.
The absorption coefficient is in the order of 104cm-1 and the band gap is found to be about 1.9 eV – 1.75 eV.
The PL spectra show red shift for higher Cu doping concentrations.
American Psychological Association (APA)
Henry, J.& Mohanraj, K.& Sivakumar, G. Ch. V.. 2018. Photoluminescence behavior of Cu2+xZn1-xSnS4 thin films by SILAR method. Jordan Journal of Physics،Vol. 11, no. 2, pp.101-105.
https://search.emarefa.net/detail/BIM-936557
Modern Language Association (MLA)
Henry, J.…[et al.]. Photoluminescence behavior of Cu2+xZn1-xSnS4 thin films by SILAR method. Jordan Journal of Physics Vol. 11, no. 2 (2018), pp.101-105.
https://search.emarefa.net/detail/BIM-936557
American Medical Association (AMA)
Henry, J.& Mohanraj, K.& Sivakumar, G. Ch. V.. Photoluminescence behavior of Cu2+xZn1-xSnS4 thin films by SILAR method. Jordan Journal of Physics. 2018. Vol. 11, no. 2, pp.101-105.
https://search.emarefa.net/detail/BIM-936557
Data Type
Journal Articles
Language
English
Notes
Record ID
BIM-936557
