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Study of interface trapped charges effect on performance of junction less trial material cylindrical surrounding-gate MOSFETs
Joint Authors
Lagraf, F.
Rechem, D.
Guergouri, K.
Source
Journal of New Technology and Materials
Issue
Vol. 9, Issue 1 (30 Jun. 2019), pp.52-58, 7 p.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2019-06-30
Country of Publication
Algeria
No. of Pages
7
Main Subjects
Topics
Abstract EN
Interface trapped charges effect on the performance of Junction Less-Trial Material Cylindrical Surrounding-gate MOSFETs (JLTMCSG-MOSFETs) has been studied.
An analytical model has been used for this purpose, it is based on solving the two-dimensional Poisson’s equation in cylindrical coordinates.
The device performance has been investigated as a function of surface potential, electrical field, drain induced barrier lowering (DIBL), subthreshold Slope (SS) and threshold voltage (Vth).
The obtained results show that the performance of the device was improved when using the trial material gate with different work functions and interface trapped charges.
This study confirms that the analytical model used is useful not only for circuit simulations, but also for device design and optimizatio
American Psychological Association (APA)
Lagraf, F.& Rechem, D.& Guergouri, K.. 2019. Study of interface trapped charges effect on performance of junction less trial material cylindrical surrounding-gate MOSFETs. Journal of New Technology and Materials،Vol. 9, no. 1, pp.52-58.
https://search.emarefa.net/detail/BIM-939064
Modern Language Association (MLA)
Lagraf, F.…[et al.]. Study of interface trapped charges effect on performance of junction less trial material cylindrical surrounding-gate MOSFETs. Journal of New Technology and Materials Vol. 9, no. 1 (2019), pp.52-58.
https://search.emarefa.net/detail/BIM-939064
American Medical Association (AMA)
Lagraf, F.& Rechem, D.& Guergouri, K.. Study of interface trapped charges effect on performance of junction less trial material cylindrical surrounding-gate MOSFETs. Journal of New Technology and Materials. 2019. Vol. 9, no. 1, pp.52-58.
https://search.emarefa.net/detail/BIM-939064
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 57-58
Record ID
BIM-939064