Buckling of Single-Crystal Silicon Nanolines under Indentation

Abstract EN

Atomic force microscope-(AFM-) based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs) of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching.

The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction.

The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN.

This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation.

Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition.

The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.