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Field Effect on Crystal Phase of Silicon in SiCeO2SiO2 Structure
Author
Source
Issue
Vol. 2008, Issue 2008 (31 Dec. 2008), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2008-05-15
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied.
The electronic structure of system consists of various defect levels inside band gap.
The temperature spatial distribution plays a great role in silicon crystallization.
The field destruction of crystal phase and its restoration, after annealing, were investigated.
American Psychological Association (APA)
Milovzorov, Dmitry E.. 2008. Field Effect on Crystal Phase of Silicon in SiCeO2SiO2 Structure. Journal of Nanomaterials،Vol. 2008, no. 2008, pp.1-4.
https://search.emarefa.net/detail/BIM-988109
Modern Language Association (MLA)
Milovzorov, Dmitry E.. Field Effect on Crystal Phase of Silicon in SiCeO2SiO2 Structure. Journal of Nanomaterials No. 2008 (2008), pp.1-4.
https://search.emarefa.net/detail/BIM-988109
American Medical Association (AMA)
Milovzorov, Dmitry E.. Field Effect on Crystal Phase of Silicon in SiCeO2SiO2 Structure. Journal of Nanomaterials. 2008. Vol. 2008, no. 2008, pp.1-4.
https://search.emarefa.net/detail/BIM-988109
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-988109