Optical and Structural Properties of Silicon Nanocrystals Embedded in SiOx Matrix Obtained by HWCVD

Abstract EN

The interest in developing optoelectronic devices integrated in the same silicon chip has motivated the study of Silicon nanocrystals (Si-ncs) embedded in SiOx (nonstoichiometric silicon oxides) films.

In this work, Si-ncs in SiOx films were obtained by Hot Wire Chemical Vapor Deposition (HWCVD) at 800, 900, and 1000°C.

The vibration modes of SiOx films were determined by FTIR measurements.

Additionally, FTIR and EDAX were related to get the proper composition of the films.

Micro-Raman studies in the microstructure of SiOx films reveal a transition from amorphous-to-nanocrystalline phase when the growth temperature increases; thus, Si-ncs are detected.

Photoluminescence (PL) measurement shows a broad emission from 400 to 1100 nm.

This emission was related with both Si-ncs and interfacial defects present in SiOx films.

The existence of Si-ncs between 3 and 6 nm was confirmed by HRTEM.