Study of High Quality Indium Nitride Films Grown on Si(100)‎ Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Abstract EN

Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system.

Ga-doped ZnO (GZO) and Amorphous AlN (a-AlN) film were used as buffer layers for InN films growth.

Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL).

XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers.

TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm.

Also, the InN films can be obtained by growth rate about ~1.8 μm/h.

Optical properties indicated that the band gap of InN/GZO is about 0.79 eV.

These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.