Reactive ion etching (RIE)‎ for micro and nanogap fabrication

الملخص EN

To understand the important relationship between the biosensor and micro and nanostructures we introduce this proposal about the fabrication of micro and nanostructure by using one of the most important dry etching processes in micro and nanostructures, reactive ion etching (IC-RIE) has been applied and developed as a method for etching micro and nanogap semiconductors.

PolySi material is used to fabricate micro and nanogap structure and gold as electrodes.

The fabrication and preparation methods to fabricate micro and nanogaps using RIE properties are discussed along with their advantages towards the nanotechnology and biodetection.

In this study, 2 masks design are proposed.

The first mask is the lateral micro and nanogap and the second mask is for gold pad electrode pattern.

Lateral micro and nanogaps are introduced in the fabrication process using polysilicon and gold as an electrode.

Conventional photolithography and dry etching techniques are used to fabricate this micro and nanogaps based on the standard CMOS technology.

As a result we need to deposit Al layer over the polysilicon semiconductor before coating a photoresist to protect the polysilicon layer during the etching (IC-RIE) for using the Al material as a hard mask.

The requirement time to etch 1μm polysilicon layer completely by using IC-RIE to fabricate the micro and nanogap structure it takes approximately 40sec.

These results are better than those using wet anisotropic etching techniques.